75V N-Channel MOSFET

General Description The AOD474 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summ

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel 100 V (D-S) MOSFET

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丝印代码：DPAK；isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

75V N-Channel MOSFET

General Description The AOD474A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Sum

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

DPAK (TO-251) PACKAGE MARKING DESCRIPTION

DPAK (TO-251) PACKAGE MARKING DESCRIPTION

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 132mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

DPAK (TO-251) PACKAGE MARKING DESCRIPTION

DPAK (TO-251) PACKAGE MARKING DESCRIPTION

Linear Output Type OPIC Light Detector

Features 1. Linear output conforming to illuminance (50 lx to 50000 lx) 2. Conforming to required visual sensitivity characteristics by means of built-in filter Peak sensitivity wavelength : TYP. 550 nm 3. Not dependent on kind of light source such as incandescent lamp and fluorescent lam

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR 400MHz~520MHz RANGE)

SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES

SHARP BREAKDOWN, LOW LEAKAGE LVA REGULATOR DIODES • Sharper breakdown voltage • Lower leakage current characteristics in the 5 – 9 volt range