N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4110 family of frequency synthesizers can be used to implement local oscillators in the upconversion and downconversion sections of wireless receivers and transmitters. They consist of a low noise digital PFD (phase frequency detector), a precision charge pump, a progra

300 MHz to 1000 MHz Quadrature Modulator

GENERAL DESCRIPTION The ADL5370 is the first in the fixed-gain quadrature modulator (F-MOD) family designed for use from 300 MHz to 1000 MHz. Its excellent phase accuracy and amplitude balance enable high performance intermediate frequency or direct radio frequency modulation for communication sy

Relampable Socket

文件：94.33 Kbytes Page：1 Pages

SYSDRIVE 3G3HV Series

文件：173.29 Kbytes Page：20 Pages

true one-port, surface-acoustic-wave (SAW) resonator

文件：58.81 Kbytes Page：3 Pages