N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS & Sony 259 specifications). AOD408L is a Green Product order

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS & Sony 259 specifications). AOD408L is a Green Product order

408 Series High Reliability Inter-Lock | Green | Metal to Metal | Receptacle | Closed Card Slot

Features .200 (5.08mm) Contact Spacing x .125 (3.18mm) or .150 (3.81mm) Row Spacing with staggered Grid Accepts .062 (1.57mm) or .093 (2.36mm) Nominal Thickness P.C. Board Edacon Hermaphroditic Contact Mating Design Contact Termination Options include P.C. Tail, Fork Tail, Wire Hole an

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Detectable Buried Barricade Tapes 400 Series

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Interconnection Cord with Plug G-Horizontal, Angled

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GP-IB Cable Assembly EMI/RFI Shielding Version

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