N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS & Sony 259 specifications). AOD408L is a Green Product order

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS & Sony 259 specifications). AOD408L is a Green Product order

Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Sanding

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Interconnection Cord with Plug G-Horizontal, Angled

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GP-IB Cable Assembly EMI/RFI Shielding Version

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