N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications. Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel Enhancement Mode Field Effect Transistor

文件：250.14 Kbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications. Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

N-Channel Enhancement Mode Field Effect Transistor

文件：250.14 Kbytes Page：5 Pages

包装：散装 描述：PUSHBUTTON 30MM 开关 按钮开关

包装：散装 描述：PUSHBUTTON 30MM 开关 按钮开关

按键开关

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages

Low-Gain Op Amp with Fast 14-Bit Settling

文件：394.94 Kbytes Page：6 Pages