800V, 2.8A N-Channel MOSFET

General Description The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can

高压MOSFET (500V - 1000V)

丝印代码：DPAK；isc N-Channel MOSFET Transistor

文件：321.85 Kbytes Page：2 Pages

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

800V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

N-CHANNEL POWER MOSFETS

文件：281.01 Kbytes Page：5 Pages

ADVANCED POWER MOSFET

文件：321.97 Kbytes Page：6 Pages