N-Channel Super Trench Power MOSFET

Features VDS= 100V, ID= 78 A RDS(ON)

MOSFET：N-Channel

N-Channel 100-V (D-S) MOSFET

文件：1.80965 Mbytes Page：8 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.77516 Mbytes Page：5 Pages

100V N-Channel MOSFET

文件：272.73 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：321.67 Kbytes Page：2 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：MOSFET N-CH 100V TO-252 分立半导体产品 晶体管 - FET，MOSFET - 单个

One Channel H-Bridge DrMOS

Features and Benefits Lowest RDS(ON) =45mΩ 60V Absolute Maximum Voltage 4.5A Maximum Continuous Current. Lowest RDS(ON) and Small Package 10~50V Operating Voltage Range Overcurrent Protection Thermal Shutdown Protection Undervoltage Lockout Fault Indicator Pin Low Standby Curre

800mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2908 series of adjustable and fixed voltage regulators are designed to provide 800mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

800mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The The AMS2908 series of adjustable and fixed voltage regulators are designed to provide 800mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower lo

800mA LOW DROPOUT VOLTAGE REGULATOR

文件：63.54 Kbytes Page：7 Pages

800mA LOW DROPOUT VOLTAGE REGULATOR

文件：63.54 Kbytes Page：7 Pages