N- and P- Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices

Complementary Enhancement Mode Field Effect Transistor

General Description The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and

Complementary Enhancement Mode Field Effect Transistor

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MOSFET：Complementary

Multi-Turn Precision Potentiometer

Features: •1-13/16” diameter •10-turn •Wirewound

Precision LCR Meter

Features: • Frequency range: 10 Hz to 2 MHz • 0.05% basic measurement accuracy • 7-digit measurement resolution • Programmable test voltage and current • Auto ranging • Test setup and measurement data storage • Four bnc terminal Kelvin connection • Standard interfaces: USB host port,

HOLE PLUGS and BUSHINGS

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HOLE PLUGS & BUSHINGS

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1-13/16 Diameter 10-Turn Wirewound Precision Potentiometer

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