N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and

N-Channel Enhancement Mode MOSFET

Application + Load/Power Switching | + Interfacing Switching | * Logic Level Shift

低压MOSFET (12V - 30V)

20V N-Channel MOSFET

文件：1.7196 Mbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

20V N-Channel MOSFET

文件：1.7196 Mbytes Page：4 Pages

Hex Schmitt-Trigger Inverters

Features 1• Operation From Very Slow Edges • Improved Line-Receiving Characteristics • High Noise Immunity Applications • HVAC Gateways • Residential Ductless Air Conditioning Outdoor Units • Robotic Controls • Industrial Stepper Motors • Power Meter and Power Analyzers • Digital Inpu

Strain Relief Mounting Hole Punches

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HEX SCHMITT-TRIGGER INVERTERS

文件：363.02 Kbytes Page：11 Pages

HEX SCHMITT-TRIGGER INVERTERS

文件：939.15 Kbytes Page：27 Pages

3M™ Hand Sanding Metal Finishing Pad, 07414, 4.375 in x 11 in, Maroon, Medium, 10 per case

文件：115.06 Kbytes Page：1 Pages