N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and

N-Channel Enhancement Mode MOSFET

Application + Load/Power Switching | + Interfacing Switching | * Logic Level Shift

低压MOSFET (12V - 30V)

20V N-Channel MOSFET

20V N-Channel MOSFET

文件：1.7196 Mbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

20V N-Channel MOSFET

文件：1.7196 Mbytes Page：4 Pages

Hex Inverter with Schmitt Trigger Input

General Description This device contains six independent gates each of which performs the logic INVERT function. Each input has hyster esis which increases the noise immunity and transforms a slowly changing input signal to a fast changing, jitter free output.

HEX SCHMITT-TRIGGER INVERTERS

文件：363.02 Kbytes Page：11 Pages

Hex Inverter with Schmitt Trigger Inputs

文件：95.26 Kbytes Page：4 Pages

HEX SCHMITT-TRIGGER INVERTERS

文件：363.02 Kbytes Page：11 Pages

HEX SCHMITT-TRIGGER INVERTERS

文件：363.02 Kbytes Page：11 Pages