N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO7410 is Pb-free (meets ROHS & Sony 259

30V N-Channel MOSFET

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低压MOSFET (12V - 30V)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO7410 is Pb-free (meets ROHS & Sony 259

30V N-Channel MOSFET

文件：235.73 Kbytes Page：5 Pages

MachFlex™, 21G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 2+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

Strain Relief Mounting Hole Punches

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Triple 3-Input NAND Gates

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Common Mode Inductors/EMI Filters

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UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer

文件：518.059 Kbytes Page：13 Pages