N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low c

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

N-Channel Enhancement Mode Field Effect Transistor

文件：1.65044 Mbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low c

TRIPLE VOLTAGE REGULATOR

■ ONLY TWO CELL NEED AS INPUT ■ THREE REGULATED OUTPUT 1) HIGH EFFICENCY PFM DC/DC CONVERTER 3.3V AT 200mA (87 EFFICENCY) 2) VERY LOW NOISE AND VERY LOW DROP VREG (3V AT 20mA) 3) VERY LOW NOISE AAND VERY LOW DROP VREG (1.9V AT 20mA) ■ LOGIC CONTROLLED ELECTRONIC SHUTDOWN ■ LOW BA

Hex Inverting Gates

文件：107.16 Kbytes Page：6 Pages

These devices contain six independent inverters

文件：241.33 Kbytes Page：7 Pages

These devices contain six independent inverters

文件：241.33 Kbytes Page：7 Pages

These devices contain six independent inverters

文件：241.33 Kbytes Page：7 Pages