P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO6701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS &

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO6701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6701 is Pb-free (meets ROHS &

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

BNC Male to Dual BNC Female Right-Angle Adapter

文件：25.55 Kbytes Page：1 Pages

1200 MHz to 2400 MHz Quadrature Modulator

文件：1.60442 Mbytes Page：36 Pages

400 MHz to 1250 MHz Quadrature Modulator

文件：1.82591 Mbytes Page：36 Pages

2050 MHz to 3000 MHz Quadrature Modulator

文件：1.24686 Mbytes Page：36 Pages