P沟道MOSFET (8V - 60V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。

丝印代码：D9**；20V P-Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

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P-Channel MOSFET

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P-Channel 30-V (D-S) MOSFET

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P沟道MOSFET (8V - 60V)

20V P-Channel MOSFET

包装：卷带（TR） 描述：MOSFET P-CH 20V 6TSOT 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel MOSFET

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20V P-Channel MOSFET

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包装：卷带（TR） 描述：MOSFET P-CH 20V 6TSOT 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel MOSFET

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P-Channel Enhancement Mode

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P-Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

文件：136.66 Kbytes Page：4 Pages

CMOS Manchester Encoder-Decoder

Description The HD-6409 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using self-aligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts No

CMOS Manchester Encoder-Decoder

Description The HD-6409 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using self-aligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts No

Unijunction Transistor

Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: Low Peak Point Current: 2µA Max Low Emitter Reverse Current: 200nA Max Passivated Surface for Reliability & Uniformity Absolute Maximum Ra

RF POWER TRANSISTOR NPN SILICON

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3 AMP ADJUSTABLE INTEGRATED SWITCHING REGULATOR

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