Plastic Encapsulated Device

Product Description: The AO4946 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON)and low gate charge. This device is suitable for use as a low and high side switch in SMPS and general purpose applications. Standard product AO4946 is Pb-

N-Channel Enhancement Mode Power MOSFET

Description The 4946 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

Dual N-Channel 60 V (D-S) 175 째C MOSFET

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VHB Tape - Specialty Tapes

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.95065 Mbytes Page：9 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08485 Mbytes Page：9 Pages