Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4932 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 11 A (VGS = 10V) ● RDS(ON)

Asymmetric Dual N-Channel MOSFET

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Asymmetric Dual N-Channel MOSFET

文件：503.33 Kbytes Page：9 Pages

Ultralow Power, Low Distortion

GENERAL DESCRIPTION The ADA4940-1/ADA4940-2 are low noise, low distortion fully differential amplifiers with very low power consumption. They are an ideal choice for driving low power, high resolution, high performance SAR and sigma-delta (Σ-Δ) analog-to-digital converters (ADCs) with resolutio

Pneumatic muffler

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Drywall Punch

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N-Channel 30-V (D-S) MOSFET

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