位置：首页 > IC中文资料第18页 > AO4924
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AO4924 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the | AOSMD 万国半导体 |   | |
AO4924 | Asymmetric Dual N-Channel MOSFET General Description The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the | AOSMD 万国半导体 | | |
AO4924 | Dual N-Channel MOSFET ■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 9 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
AO4924 | Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFETPower MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC | VBSEMI 微碧半导体 | | |
AO4924 | 低压MOSFET (12V - 30V) | AOS 美国万代 | | |
Asymmetric Dual N-Channel MOSFET General Description The AO4924 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the | AOSMD 万国半导体 | | ||
Dual N-Channel 40-V (D-S) MOSFET 文件：1.01103 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Dual N-Channel 40-V (D-S) MOSFET 文件：1.00461 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 20-V (D-S) MOSFET 文件：165.54 Kbytes Page：3 Pages | AnalogPower | | ||
Dual N-Channel MOSFET uses advanced trench technology 文件：1.46538 Mbytes Page：4 Pages | DOINGTER 杜因特 | |
AO4924产品属性
- 类型
描述
- 型号
AO4924
- 功能描述
MOS N CH DUAL 30V 9A 7.3A SOIC
- RoHS
是
- 类别
分离式半导体产品 >> FET - 阵列
- 系列
SRFET™
- 产品目录绘图
8-SOIC Mosfet Package
- 标准包装
1
- 系列
- FET
- 型
2 个 N 沟道（双） FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
60V 电流 - 连续漏极(Id) @ 25°
- C
3A 开态Rds（最大）@ Id, Vgs @ 25°
- C
75 毫欧 @ 4.6A，10V Id 时的
- Vgs(th)（最大）
3V @ 250µA 闸电荷(Qg) @
- Vgs
20nC @ 10V 输入电容(Ciss) @
- Vds
- 功率 -
- 最大
1.4W
- 安装类型
表面贴装
- 封装/外壳
PowerPAK? SO-8
- 供应商设备封装
PowerPAK? SO-8
- 包装
Digi-Reel®
- 产品目录页面
1664(CN2011-ZH PDF)
- 其它名称
SI7948DP-T1-GE3DKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
2019+ |
SOP |
18000 |
原厂渠道 可含税出货 |
|||
AOS/万代 |
23+ |
SO-8 |
24190 |
原装正品代理渠道价格优势 |
|||
AOS |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
|||
AO |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
AOS |
24+ |
SO-8 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
AO |
18+ |
SOP-8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
AOS |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
AOS/万代 |
2025+ |
SO-8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
AOS/万代 |
25+ |
SOP8 |
880000 |
明嘉莱只做原装正品现货 |
|||
ALPHA |
24+ |
SOP8 |
39500 |
进口原装现货 支持实单价优 |
AO4924规格书下载地址
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