Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4850 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications. AO4850 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 3.1A (VG

丝印代码：4850；Dual N-Channel MOSFET

■ Features ● VDS (V) = 75V ● ID = 3.1A (VGS = 10V) ● RDS(ON)

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

丝印代码：4850；Dual N-Channel MOSFET

■ Features ● VDS (V) = 75V ● ID = 3.1A (VGS = 10V) ● RDS(ON)

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