Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4821 is Pb-free (meets ROH

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4821 is Pb-free (meets ROH

Dual P-Channel MOSFET

■ Features ● VDS (V) = -12V ● ID = -9 A (VGS = -4.5V) ● RDS(ON)

Dual P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Advanced High Cell Density Process • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching

12V Dual P-Channel MOSFET

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NYLON M/F HEX STANDOFF

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS