Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications). AO4816L is a Green Produc

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pb free (meets ROHS & Sony 259 specifications). AO4816L is a Green Produc

Dual N-Channel Enhancement Mode Field Effect Transistor

NYLON M/F HEX STANDOFF

[KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS

Thick Film Surface Mounted Medium Body Tape and reel packaging standard

Features ■ RoHS compliant* (see How to Order “Termination” option) ■ Standard E.I.A. package compatible with automatic placement equipment ■ Tape and reel packaging standard ■ Custom circuits are available ■ Compliant leads to reduce solder joint fatiguing ■ Standard electrical schematics: i

4800P Series - Thick Film Surface Mounted Medium Body

文件：364.21 Kbytes Page：3 Pages

4800P Series - Thick Film Surface Mounted Medium Body

文件：374.56 Kbytes Page：3 Pages

4800P Series - Thick Film Surface Mounted Medium Body

文件：364.21 Kbytes Page：3 Pages