Complementary Enhancement Mode Field Effect Transistor

General Description The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel P-

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON)

N-Chanel and P-Channel MOSFET use advanced trench technology

Description： This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON), low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application. Features： N-Channel:V DS=20V,ID=6.8A,RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

MOSFET：Complementary

20V Dual P N-Channel MOSFET

文件：257.48 Kbytes Page：9 Pages

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) RDS(ON)

20V Dual P N-Channel MOSFET

文件：257.48 Kbytes Page：9 Pages

N and P-Channel Enhancement Mode Power MOSFET

Description The 4622 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =6.4A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

VHB Tape - Specialty Tapes

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VHB?줥apes

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Relampable Indicator Light

文件：92.43 Kbytes Page：1 Pages