Complementary Enhancement Mode Field Effect Transistor

General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel p-channel VDS (V) = 30V -30V ID = 7.2

丝印代码：4620；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

互补型功率MOSFETs

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

文件：307.1 Kbytes Page：7 Pages

丝印代码：4620；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

文件：307.1 Kbytes Page：7 Pages

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