Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 6.3 A (VGS = 10V) RDS(ON)

N and P-Channel Enhancement Mode Power MOSFET

Description The 4611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

VHB™ Tape Specialty Tapes

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VHB?줥apes

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Relampable Indicator Light

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