Complementary Enhancement Mode Field Effect Transistor

General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n channel FET to minimize body diode losses. AO4607 is Pb-

Thick Film Conformal SIPs Low profi le is compatible with DIPs Ammo-pak packaging available

Features ■ Lead free version available (see How to Order “Termination” option) ■ RoHS compliant (lead free version)* ■ Low profile is compatible with DIPs ■ Wide assortment of pin packages enhances design flexibility ■ Ammo-pak packaging available ■ Recommended for rosin flux and

Thick Film Conformal SIP

Features ■ Lead free version available (see How to Order “Termination” option) ■ RoHS compliant (lead free version)* ■ Low profile is compatible with DIPs ■ Wide assortment of pin packages enhances design flexibility ■ Ammo-pak packaging available ■ Recommended for rosin flux and

Networks

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Networks

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Bi-color Rectangular Shape Type

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