Complementary Enhancement Mode Field Effect Transistor

General Description The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON)and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications AO4604 and AO4604L are electrically identical. ​​​​​​​ -RoHS Compliant -AO4604L is Halogen Fre

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes Page：9 Pages

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

文件：343.96 Kbytes Page：9 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Networks

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Networks

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High Q, high self-resonant frequency

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Varnished Chokes

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