Complementary Enhancement Mode Field Effect Transistor

General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony

Bipolar Integrated Circuit with Photodetection Function

For infrared remote control systems Features Extension distance is 8 m or more External parts not required Adoption of visible light cutoff resin

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 2SD0601A(2SD601A) +

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 2SD0601A(2SD601A) +

WIDEBAND, FET-INPUT OPERATIONAL AMPLIFIER

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High Efficiency LED, 3 mm Tinted Total Diffused

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