Complementary Enhancement Mode Field Effect Transistor

General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO

丝印代码：4600；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

丝印代码：4600；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO

包装：卷带（TR） 描述：MOSFET N/P-CH 30V 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 阵列

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

DESCRIPTION The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. ■ GOLD METALLIZATION ■ 860-960 MHz ■ 2

High Intensity LED in 3 mm Tinted Diffused Package

文件：70.68 Kbytes Page：5 Pages

High Intensity LED in 3 mm Tinted Diffused Package

文件：70 Kbytes Page：5 Pages

High Intensity LED in 3 mm Tinted Diffused Package

文件：71.01 Kbytes Page：5 Pages

High Efficiency LED, 3 mm Tinted Total Diffused

文件：101.11 Kbytes Page：8 Pages