N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Produ

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

30V N-Channel MOSFET

General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Product Summary VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON)

30V N-Channel MOSFET

文件：171.76 Kbytes Page：4 Pages

MOSFET：N-Channel

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Produ

30V N-Channel MOSFET

文件：171.76 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source ind

Adafruit eInk Feather Friend with 32KB SRAM

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