Design of Power Factor Correction

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Design of Power Factor Correction

ZENER DIODE CHIPS

• 1N4099 THRU 1N4135 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTAC

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low noise applications.

LOW NOISE ZENER DIODE 6.8 VOLTS THRU 43 VOLTS 350mW,5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4099 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications. NOTE: For lower voltage devices, see CMPZ4614 Series.

PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJV3107R