Genesi Pegasos II Kernel and NFS Facility

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丝印代码：G3-；MMIC wideband amplifier

DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. FEATURES • Internally matched • Wide frequency range • Optimized for 900 MHz • Excellent isolation • Low noise • Unconditionally stable

MCT photoconductive detector

MCT photoconductive detector Dewar type detector with high sensitivity and high-speed response in long wavelength range Features ● Choice of spectral response range (up to 25 µm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various typ

3 V, 900 MHz LOW NOISE SI MMIC AMPLIFIER

DESCRIPTION The UPC2748T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operatin

3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS

DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold. The µPC2747TB, µPC2748TB have compatible pin connections and performance