Microchip CTMU for Capacitive Touch Applications

文件：846.81 Kbytes Page：22 Pages

AN0625-521P

[TRANSEALS] Features • Heel pressure release ribs • External lip for improved dirt exclusion • Crush lip for positive location Category • Rod Wiper, Snap Fit Construction • Orange Polyurethane 361 with knifed wiping lip Housing • Open rectangular groove in one

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi