N-Channel MOSFET uses advanced trench technology

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Dual N-Channel 30-V (D-S) MOSFET

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MOSFET

Dual N-Channel 30 V (D-S) MOSFET

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Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing)

■ Features 1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. φ 0.32 mm) 2. Uniform emission intensity on chip emitting surface 3. Low peak forward voltage type (Peak forward voltage V FM: TYP. 1.7V) * Expansion range on lens surface of infrared

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

0.4 inch ( 10.16 mm ) SINGLE DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVS-4X10A/4X40A is 0.4 inch (10.16mm) height single digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. The high efficiency red displays has red face and red segments. Bright red displays has black face and red segments. Green and yellow d

0.4 inch ( 10.16 mm ) SINGLE DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVS-4X10A/4X40A is 0.4 inch (10.16mm) height single digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. The high efficiency red displays has red face and red segments. Bright red displays has black face and red segments. Green and yellow d

0.400-INCH SEVEN SEGMENT DISPLAYS

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