Cascadable Thin Film Amplifier, 28.5 dB Gain, 10 - 1000 MHz

Description M/A-COM’s AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier 28.5 dB Gain, 10 - 1000 MHz

Description M/A-COM’s AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier 28.5 dB Gain, 10 - 1000 MHz

Description M/A-COM’s AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier

Description M/A-COM’s AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier, 28.5 dB Gain, 10 - 1000 MHz

Description M/A-COM’s AM-183 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

10-1000 MHz, 28.5 dB gain, cascadable thin film amplifier

射频放大器 10-600MHz NF: 5.0dB VSWR: 2.0:1

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA