2-stage LNA

The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless(CDMA, GSM, PCS, PHS, WCDMA, DMB, WLAN, WiBro, WiMAX), GPS, satellite communi- cation terminals, CATV and so o

Internally Matched LNA Module

文件：460.7 Kbytes Page：3 Pages

Internally Matched LNA Module

文件：326.1 Kbytes Page：3 Pages

Internally Matched LNA Module

文件：620.8 Kbytes Page：3 Pages

Internally Matched LNA Module

文件：326.1 Kbytes Page：3 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：36.03 Kbytes Page：2 Pages