Internally Matched LNA Module

文件：460.7 Kbytes Page：3 Pages

Internally Matched LNA Module

文件：326.1 Kbytes Page：3 Pages

2-stage LNA

Internally Matched LNA Module

文件：620.8 Kbytes Page：3 Pages

Internally Matched LNA Module

文件：326.1 Kbytes Page：3 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：36.03 Kbytes Page：2 Pages