EPAD??OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1722E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1722E is a direct replacement of the ALD1712 operational amplifier, with the

EPAD짰 LOW POWER CMOS OPERATIONAL AMPLIFIER

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EPAD® LOW POWER CMOS OPERATIONAL AMPLIFIER

EPAD??OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1722E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1722E is a direct replacement of the ALD1712 operational amplifier, with the

EPAD??OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1722E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1722E is a direct replacement of the ALD1712 operational amplifier, with the

Integrated Circuit Pulse Width Modulator (PWM) Control Circuit

Description: The NTE1722 is a high performance pulse width modulator integrated circuit in an 18–Lead DIP type package intended for fixed frequency switching regulators and other power control applications. Functions included in this IC are a temperature compensated voltage reference, sawtooth

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)