EPAD??MICROPOWER OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1721E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1721E operational amplifier is a direct replacement of the ALD1701 operationa

EPAD짰 PRODUCT SELECTION GUIDE

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PRECISION MICROPOWER CMOS OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1721/ALD1721G is a monolithic CMOS micropower high slew rate operational amplifier intended for a broad range of precision applications requiring exremely low input signal power. Input signal power is the product of input offset voltage and input bias current, which

Analog Op Amps

EPAD??MICROPOWER OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1721E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1721E operational amplifier is a direct replacement of the ALD1701 operationa

Thermal Head-Use, 8-Channel, Transistor Array???

Overview The LB1721M is an 8-channel transistor array that has a low output saturation voltage and can be driven by a CMOS IC. It is especially suited for use in thermal head, LED drive applications. Features • Common-emitter 8-channel transistor array. • Low output saturation voltage. • On-c

Integrated Circuit Pulse Width Modulator (PWM) Regulator

Description: The NTE1721 and NTE1723 are pulse width modulator control–circuits designed to offer improved performance and lowered external parts count when implemented for controlling all types of switching power supplies. The no–chip +5.1V reference is trimmed to ±1 and the input common–mode

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)