QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD??

GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. For a given input voltage,changing the threshold turn-on voltage of a MOSFET device precisely changes its drain

QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)

GENERAL DESCRIPTION\nALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. For a given input voltage,changing the threshold turn-on voltage of a MOSFET device precisely changes its drain o • Operates from 2V, 3V, 5V to 10V\n• Flexible basic circuit building block and design element\n• Very high resolution -- average programmable voltage resolution of 0.1mV\n• Wide dynamic range -- current levels from 0.1µA to 3000µA\n• Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps\n• P;

EPAD짰 PRODUCT SELECTION GUIDE

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QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD??

GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs t

Mosfet Arrays

QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD??

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Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Melody IC

Optocoupler with Phototransistor Output

DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. FEATURES • High common mode rejection • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides

SOLID STATE I/O INTERFACE MODULE (DC INPUT MODULE)

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