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型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

SAMSUNG

三星

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MOTOROLA

摩托罗拉

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

UOT

东贝光电

PIN PHOTODIODE

Description Large area planar silicon photodiode mounted on a two lead PC board substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Features • High photo sensitivity • Low junction capacitance • High cut-off frequency • Fast sw

UOT

东贝光电

TO-220 8A Triac

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SANKEN

三垦

更新时间:2026-5-23 23:02:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARR
95+
TO220
11
只售原装正品
IRF841
25+
31
31
sam
2023+
原厂封装
50000
原装现货
IR
23+
TO-263
8000
只做原装现货
IR
23+
TO-263
7000
IR
17+
TO-220
31518
原装正品 可含税交易
sam
24+
N/A
6980
原装现货,可开13%税票
PHI
23+
SOP3.9MM
40000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
IR
23+24
TO-262
59630
主营原装MOS,二三级管,肖特基,功率场效应管

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