三相桥式驱动电路

AiP2130是一个高压高速的功率MOSFET和IGBT驱动器，具有三路独立的高低边输入输出通道。输入逻辑兼容标准的CMOS或LSTTL电平。电路内部含有一个以地为参考的运算放大器，通过外接的灵敏度电阻可提供一个桥式电流反馈，该电阻也可以作为ITRIP端电流触发功能的取样电阻。FAULT开漏输出用于电路处于欠压关断或过流保护的监控指示。输出驱动器配备高脉冲电流缓冲级，能将驱动器交叉传导 (Cross-conduction) 减至最低。内部匹配传输延迟的简化了电路在高速应用时的设计。电路用于驱动N沟道MOSFET或IGBT，自举浮动沟道的最高电压达650V， • 自举浮动沟道设计，最高极限偏置电压达 650V，有一定的瞬时负压 dV/d t 免疫能力。\n• 栅电压驱动范围：10～20V。\n• 三路独立的高低边输入输出通路。\n• 输入兼容 CMOS 或 LSTTL 电平。\n• 大电路流出驱动，输出峰值电流为 Io+≤-200mA，Io-≥420mA\n• 内部高低边输出的死区控制，死区时间范围为 1μs～4.4μs\n• 输入输出开启/关断延迟时间为：tON：500ns～1000ns，tOFF：250ns～580ns\n• 内部含有 VCC、VBS 的欠压保护，对所有高低边通道进行欠压关断锁定\n• 内部含有电流过流保护控制，对所有高低边通道;

3-PHASE BRIDGE DRIVER

The MPIC2130 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5 V CMOS or LSTTL out

3-PHASE BRIDGE DRIVER

The MPIC2130 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5 V CMOS or LSTTL out

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

Photo Modules for PCM Remote Control Systems

DESCRIPTION These products are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package contains an IR filter. The demodulated output signal can be directly connected to a microprocessor for decoding. FEATURES •

LOW POWER SINGLE OPERATIONAL AMPLIFIER

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