90V三相桥式驱动电路

AiP2119是一款三相90V半桥栅极驱动电路，可用于驱动功率MOSFET和IGBT。使能引脚ENB可使芯片进入低功耗待机模式。电路内部包含多种电路保护设计，其中包括死区设计、直通保护和欠压保护，可以有效保护电路。该电路适用于电动工具等中小功率无刷直流电机应用。 • 低边电源电压范围：5.5～16V\n• 死区设计，死区时间：0.5us（典型值）\n• 内含直通保护\n• 高低边欠压保护\n• 高驱动电流\n• 工作温度范围：-40℃～+85℃\n• 封装形式：TSSOP20/TSSOP24/QFN24;

Y color difference I/F

Description The CXA2119M is a video switch IC developed for Y color difference I/F used in televisions. Features • Two YCbCr input systems, one RGB input system, one YCbCr output system • Three inputs, one output for composite video signal • On-chip matrix circuit for RGB signal → YCbCr signa

DUAL SINGLE-SUPPLY OPERATIONAL AMPLIFIER

■ GENERAL DESCRIPTION NJM2119 is an ultra-low input offset voltage and bias current, low drift and single supply dual operational amplifier. NJM2119 is suitable for a high accurate instrumental amplifier and sensor amplifier. ■ FEATURES ● Single Supply ● Operating Voltage

DUAL SINGLE-SUPPLY OPERATIONAL AMPLIFIER

■ GENERAL DESCRIPTION NJM2119 is an ultra-low input offset voltage and bias current, low drift and single supply dual operational amplifier. NJM2119 is suitable for a high accurate instrumental amplifier and sensor amplifier. ■ FEATURES ● Single Supply ● Operating Voltage

HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing