EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 200 A • Best-in-class highest power density, IC = 200 A • 750 V collector-emitter blocking voltage capability • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C • Short circu

汽车IGBT及半导体分立器件

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 200 A • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCEsat = 1.4 V (typ.) at ICnom = 200 A, 25°C • Short circuit robust tsc = 5 μs at VCE = 470 V, VGE = 15 V • Up to 40% less System Rth due to reflow capabi

Duo Pack EDT2™ IGBT and emitter controlled diode in TO247PLUS package

Features • VCE = 750 V • IC = 200 A • Best-in-class 750 V TO247 PLUS - Highest power output per device • Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems • Very low VCEsat (C-KE) = 1.25 V (typ.) at ICnom = 200 A, 25°C • Short circuit robust tsc = 3 μs at

Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 200 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow