Fast Response Low Power Unipolar Hall Effect Switch

AH182/AH183 is a three-terminal Hall effect sensor device with\nan output driver, mainly designed for battery–operation,\nhand-held equipment (such as cellular and cordless phones, and\nPDA’s) The total operation power is down to 15uW in the 2.75V\nsupply.\nThe south pole of sufficient strength will Micropower operation2.5V to 5.5V battery operationOffset Canceling TechnologySuperior temperature stabilityExtremely Low Switch-Point DriftInsensitive to Physical Stress-40°C to 85°C operating temperatureLead Free packages: SIP-3L and SC59 (Commonly\nknown as SOT23 in Asia) (Note 1)SC59: Available i;

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA