50??High Linearity Low Noise Internally Biased Wideband Gain Block

PRODUCT DESCRIPTION The AGB3309 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching component

50??High Linearity Low Noise Internally Biased Wideband Gain Block

PRODUCT DESCRIPTION The AGB3309 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching component

RF放大器

50Ω High Linearity Low Noise Internally Biased Wideband Gain Block

High Accuracy anyCAP??200 mA Low Dropout Linear Regulator

GENERAL DESCRIPTION The ADP3303 is a member of the ADP330x family of precision low dropout anyCAP voltage regulators. The ADP3303 stands out from the conventional LDOs with a novel architecture, an enhanced process and a new package. Its patented design requires only a 0.47 µF output capacitor fo

anyCAP??100 mA Low Dropout Linear Regulator

GENERAL DESCRIPTION The ADP3309 is a member of the ADP330x family of precision low dropout anyCAP voltage regulators. It is pin-for-pin and functionally compatible with National’s LP2981, but offers performance advantages. The ADP3309 stands out from conventional LDOs with a novel architecture an

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJNS4204R

Ultrahigh-Speed Switching Applications

P-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.