50W High Linearity Low Noise Wideband Gain Block

PRODUCT DESCRIPTION The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50Ω system. With a high output IP3, low noise figure

The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...

50W High Linearity Low Noise Wideband Gain Block

PRODUCT DESCRIPTION The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50Ω system. With a high output IP3, low noise figure

50W High Linearity Low Noise Wideband Gain Block

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDSon)=5Ω

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * RDS(on)= 5Ω * 60 Volt VDS

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F

DUAL FET BUS SWITCH

文件：62.11 Kbytes Page：4 Pages