50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCT DESCRIPTION The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50Ω wireless infrastructure applicatio

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...

50 ohm High IP3 Low Noise Wideband Gain Block

50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCT DESCRIPTION The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50Ω wireless infrastructure applicatio

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ● High Input Impedance ● Low Saturation Voltage ● Enhancement Mode ● 20V Gate Drive Applications: ● High Power Switching ● Motor Control

SECOND SOURCE T-1 3/4 SOLID STATE LAMPS

文件：199.57 Kbytes Page：3 Pages

LM2900/LM3900/LM3301 Quad Amplifiers

文件：323.8 Kbytes Page：20 Pages

LM2900/LM3900/LM3301 Quad Amplifiers

文件：323.8 Kbytes Page：20 Pages

SUBMINIATURE PHOTOINTERRUPTER

文件：55.62 Kbytes Page：3 Pages