50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCT DESCRIPTION The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50Ω wireless infrastructure applicatio

50 ohm High IP3 Low Noise Wideband Gain Block

Please note: this product is being discontinued and is not recommended for new designs.\n\nThe AGB3301 is one of a series of GaAs MESFETamplifiers designed for use in applicationsrequiring high linearity, low noise and low distortion.With a high output IP3, low noise figure and wideband operation, t • 250 - 3000 MHz Frequency Range\n• +45 dBm Output IP3\n• Low Noise Figure: 2.4 dB at 900 MHz\n• 13.5 dB Gain at 900 MHz\n• +24 dBm P1dB\n• SOT-89 Package\n• Single +5V to +9V Supply\n• Low Power: less than 1 Watt\n• Case Temperature: -40 to +100 oC\n• RoHS Compliant Package, 260 oC MSL-2;

The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK

PRODUCT DESCRIPTION The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50Ω wireless infrastructure applicatio

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

50ohm High Linearity Low Noise Wideband Gain Block

文件：1.07216 Mbytes Page：16 Pages

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ● High Input Impedance ● Low Saturation Voltage ● Enhancement Mode ● 20V Gate Drive Applications: ● High Power Switching ● Motor Control

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