IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturat

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

封装/外壳：TO-247-3 包装：管件 描述：IGBT - 650V, 160A FIELD STOP TRE 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning

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