| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 |   | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
onsemi(安森美) |
25+ |
- |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
VISHAYMAS |
25+23+ |
R-1 |
51549 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON |
24+ |
90000 |
|||||
VISHAY/威世 |
22+ |
R-1 |
20000 |
公司只有原装 品质保障 |
|||
ON/安森美 |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
ON/安森美 |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
24+ |
R-1 |
50000 |
只做原装，欢迎询价，量大价优 |
AF4N60S芯片相关品牌
AF4N60S规格书下载地址
AF4N60S参数引脚图相关
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2019-8-6
DdatasheetPDF页码索引
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