N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

N-Channel Enhancement Mode Power MOSFET

General Description\nThe advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.\nThe SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low - Simple Drive Requirement\n- Low On-resistance\n- Fast Switching;

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

N-Channel Enhancement Mode Power MOSFET

General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited f

SOP8 N 20V 11MR

文件：1.454924 Mbytes Page：5 Pages

V(ds): 30V; V(gs): +-20V; N-channel 30-V (D-S) MOSFET

N-Channel 20V (D-S) MOSFET

文件：1.00662 Mbytes Page：9 Pages

0.4 INCH (10.1MM) TWO DIGIT STICK DISPLAY

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertor

0.400-INCH SEVEN SEGMENT DISPLAYS

文件：624.36 Kbytes Page：7 Pages

PC Card and OHCI Controller

文件：841.72 Kbytes Page：201 Pages

PC Card and OHCI Controller

文件：841.72 Kbytes Page：201 Pages