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AF133晶体管资料

  • AF133别名:AF133三极管、AF133晶体管、AF133晶体三极管

  • AF133生产厂家:德国椤茨标准电器公司

  • AF133制作材料:Ge-PNP

  • AF133性质:调幅 (AM)_前置放大 (V)_混频 (M)

  • AF133封装形式:直插封装

  • AF133极限工作电压

  • AF133最大电流允许值

  • AF133最大工作频率:100MHZ

  • AF133引脚数:4

  • AF133最大耗散功率

  • AF133放大倍数

  • AF133图片代号:D-18

  • AF133vtest:0

  • AF133htest:100000000

  • AF133atest:0

  • AF133wtest:0

  • AF133代换 AF133用什么型号代替:AF127,AF200,3AG53C,

AF133价格

参考价格:¥0.5850

型号:AF1332NUL 品牌:ANACHIP 备注:这里有AF133多少钱,2026年最近7天走势,今日出价,今日竞价,AF133批发/采购报价,AF133行情走势销售排行榜,AF133报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Enhancement Mode Power MOSFET

文件:263.02 Kbytes Page:5 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

DIODES

美台半导体

N-Channel Enhancement Mode Power MOSFET

文件:263.02 Kbytes Page:5 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

文件:263.02 Kbytes Page:5 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

文件:263.02 Kbytes Page:5 Pages

ANACHIP

易亨电子

N-Channel Enhancement Mode Power MOSFET

文件:263.02 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

DIODES

美台半导体

P-Channel Enhancement Mode Power MOSFET

文件:278.4 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:278.4 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:278.4 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:278.4 Kbytes Page:5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件:278.4 Kbytes Page:5 Pages

ANACHIP

易亨电子

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

AF133产品属性

  • 类型

    描述

  • 型号

    AF133

  • 制造商

    ANACHIP

  • 制造商全称

    Anachip Corp

  • 功能描述

    N-Channel Enhancement Mode Power MOSFET

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
06+
SOT-323
11320
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
DIODES
24+
SOT-323
5000
全新原装正品,现货销售
DIODES/A
25+
SOT-323
2800
原装现货!可长期供货!
ANACHIP
24+
SOT-23
15000
ANACHIP
23+
SOT-323
863000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
DIODES
06+
SOT-323
11376
全新 发货1-2天
DIODES
23+
SOT-323
8560
受权代理!全新原装现货特价热卖!
DIODES
26+
SMD
86720
全新原装正品价格最实惠 假一赔百
DIODES
2023+
SOT23
50000
原装现货

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