丝印代码：ADS805E；12-Bit, 20MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES HIGH SFDR: 74dB at 9.8MHz fIN HIGH SNR: 68dB LOW POWER: 300mW LOW DLE: 0.25LSB FLEXIBLE INPUT RANGE OVER-RANGE INDICATOR APPLICATIONS STUDIO CAMERAS IF AND BASEBAND DIGITIZATION COPIERS TEST INSTRUMENTATION DESCRIPTION The ADS805 is a 20MHz, high dynamic range, 12-bit, pi

丝印代码：ADS805E；12-Bit, 20MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES HIGH SFDR: 74dB at 9.8MHz fIN HIGH SNR: 68dB LOW POWER: 300mW LOW DLE: 0.25LSB FLEXIBLE INPUT RANGE OVER-RANGE INDICATOR APPLICATIONS STUDIO CAMERAS IF AND BASEBAND DIGITIZATION COPIERS TEST INSTRUMENTATION DESCRIPTION The ADS805 is a 20MHz, high dynamic range, 12-bit, pi

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

文件：24.81 Kbytes Page：2 Pages