Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

Ultralow Noise, LDO XFET Voltage References with Current Sink and Source

GENERAL DESCRIPTION The ADR44x series is a family of XFET® voltage references featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, voltage cha

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% 8MSOP 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% 8SOIC 集成电路（IC） 电压基准

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442.

Phase Control SCR 750 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, Hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ He

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products