Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns trans

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns tran

双自举，12 V MOSFET 驱动器

ADP3118 是一款双高电压 MOSFET 驱动器，适用于驱动两个 N 沟道 MOSFET，即非绝缘同步降压功率转换器中的两个开关。 每个驱动器能够驱动一个 3000 pF 负载，传播延迟为 25 ns，转换时间为 25 ns。 其中一个驱动器可以自举，适用于处理与浮动高压侧门极驱动器相关联的高电压摆率。ADP3118 包括了重叠驱动保护，可防止外部 MOSFET 中的击穿电流。 • All in one synchronous buck converter\n• Anti cross-conduction protection circuitry\n• Output disable control turns off both MOSFETs to float output\n• Optimized for low gate charge MOSFETs;

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns tran

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns trans

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns tran

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns trans

Dual Bootstrapped 12 V MOSFET Driver with Output Disable

GENERAL DESCRIPTION The ADP3118 is a dual, high voltage MOSFET driver optimized for driving two N-channel MOSFETs, which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 25 ns tran

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

General-purpose dual line amplifier

CD Amplifiers / Low-Frequency , Small-Signal Amplifiers

Marktech Standard 5mm w/Standoffs

FEATURES • Cost Effective • Reliable and Rugged • IC Compatible • With standoffs

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES • TrenchMOS output stage • Current limiting • Overload protection • Overtemperature protection • Protection latched reset by

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD